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Record 1 of 248
Author(s):
Growth and characterizations of InGaN on N- and Ga-polarity GaNgrown by plasma-assisted molecular-beam epitaxy JOURNAL OF CRYSTAL GROWTH 2002, Vol 237, pp 1148-1152 Source item page count: 5
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29-char source abbrev: J CRYST GROWTH
Record 2 of 248
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Sotto A; Guder HS; Perez-Pastor A; Segura A; Zuniga J; Munoz V Pressure dependence of the bandgap bowing in zinc-blendeZnTe1-xSex HIGH PRESSURE RESEARCH 2002, Vol 22, Iss 2, pp 257-260 Source item page count: 4
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Record 3 of 248
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Fedler F; Hauenstein RJ; Klausing H; Mistele D; Semchinova O;Aderhold J; Graul J Strain, morphological, and growth-mode changes in AlGaN singlelayers at high AlN mole fraction JOURNAL OF CRYSTAL GROWTH 2002, Vol 241, Iss 4, pp535-542 Source item page count: 8
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29-char source abbrev: J CRYST GROWTH
Record 4 of 248
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Wu J; Walukiewicz W; Yu KM; Ager JW; Haller EE; Lu H; Schaff Small band gap bowing in In1-xGaxN alloys APPLIED PHYSICS LETTERS 2002, Vol 80, Iss 25, pp 4741-4743 Source item page count: 3
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29-char source abbrev: APPL PHYS LETT
Record 5 of 248
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Nagarajan V; Ganpule CS; Roytburd A; Ramesh R Nanoscale phenomena in ferroelectric thin films INTEGRATED FERROELECTRICS 2002, Vol 42, pp 173-189 Source item page count: 17
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Record 6 of 248
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Kurtz SR; Allerman AA; Koleske DD; Peake GM Electroreflectance of the AlGaN/GaN heterostructure andtwo-dimensional electron gas APPLIED PHYSICS LETTERS 2002, Vol 80, Iss 24, pp 4549-4551 Source item page count: 3
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29-char source abbrev: APPL PHYS LETT
Record 7 of 248
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Naranjo FB; Fernandez S; Sanchez-Garcia MA; Calle F; Calleja E;Trampert A; Ploog KH Structural and optical characterization of thick InGaN layers andInGaN/GaN MQW grown by molecular beam epitaxy MATERIALS SCIENCE AND ENGINEERING B-SOLID STATEMATERIALS FOR ADVANCED TECHNOLOGY 2002, Vol 93, Iss1-3, pp 131-134 Source item page count: 4
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Record 8 of 248
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Teofilov N; Thonke K; Sauer R; Kirste L; Ebling DG; Benz KW Optical investigation of AlxGa1-xN epitaxial films grown on AlNbuffer layers DIAMOND AND RELATED MATERIALS 2002, Vol 11, Iss 3-6, pp892-895 Source item page count: 4
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Record 9 of 248
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First principles molecular dynamics study of amorphous AlxGa1-xNalloys JOURNAL OF APPLIED PHYSICS 2002, Vol 91, Iss 12, pp9743-9751 Source item page count: 9
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29-char source abbrev: J APPL PHYS
Record 10 of 248
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Paulson PD; Haimbodi MW; Marsillac S; Birkmire RW; ShafarmanWN CuIn1-xAlxSe2 thin films and solar cells JOURNAL OF APPLIED PHYSICS 2002, Vol 91, Iss 12, pp10153-10156 Source item page count: 4
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29-char source abbrev: J APPL PHYS
Record 11 of 248
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Growth and optical properties of double heterostructureGaN/InGaN/GaN films with large composition CHINESE PHYSICS LETTERS 2002, Vol 19, Iss 5, pp 707-710 Source item page count: 4
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29-char source abbrev: CHIN PHYS LETT
Record 12 of 248
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Paduano QS; Weyburne DW; Bouthillette LO; Wang SQ; AlexanderMN JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULARPAPERS SHORT NOTES & REVIEW PAPERS 2002, Vol 41, Iss 4A,pp 1936-1940 Source item page count: 5
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29-char source abbrev: JPN J APPL PHYS PT 1
Record 13 of 248
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Density functional theory study on the origins of the gap bowing inZn1-xMgxSe JOURNAL OF PHYSICS-CONDENSED MATTER 2002, Vol 14, Iss15, pp 4025-4033 Source item page count: 9
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29-char source abbrev: J PHYS-CONDENS MATTER
Record 14 of 248
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Band offsets in III-nitride heterostructures JOURNAL OF PHYSICS D-APPLIED PHYSICS 2002, Vol 35, Iss 7,pp 591-594 Source item page count: 4
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29-char source abbrev: J PHYS-D-APPL PHYS
Record 15 of 248
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Band gap energy bowing and residual strain in CuAl(SxSe1-x)(2)chalcopyrite semiconductor epilayers grown by low-pressuremetalorganic vapor phase epitaxy JOURNAL OF APPLIED PHYSICS 2002, Vol 91, Iss 9, pp5909-5914 Source item page count: 6
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29-char source abbrev: J APPL PHYS
Record 16 of 248
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Theoretical analysis of disorder effects on electronic and opticalproperties of the quaternary alloy Ga1-xAlxAsySb1-y MATERIALS CHEMISTRY AND PHYSICS 2002, Vol 74, Iss 3, pp328-335 Source item page count: 8
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29-char source abbrev: MATER CHEM PHYS
Record 17 of 248
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First-principles calculations of gap bowing in InxGa1-xN and InxAl1-xN alloys: Relation to structural and thermodynamic properties PHYSICAL REVIEW B 2002, Vol 65, Iss 7, art. no. 075213 Source item page count: 7
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Record 18 of 248
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Iwata K; Fons P; Yamada A; Shibata H; Matsubara K; Nakahara K;Takasu H; Niki S PHYSICA STATUS SOLIDI B-BASIC RESEARCH 2002, Vol 229,Iss 2, pp 887-890 Source item page count: 4
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Record 19 of 248
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Be-chalcogenide alloys for improved R-G-B LEDs: BexZnyCd1-x-ySeon InP PHYSICA STATUS SOLIDI B-BASIC RESEARCH 2002, Vol 229,Iss 2, pp 1005-1009 Source item page count: 5
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29-char source abbrev: PHYS STATUS SOLIDI B-BASIC RE
Record 20 of 248
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Band-gap bowing parameter of the AlxGa1-xN derived fromtheoretical simulation JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULARPAPERS SHORT NOTES & REVIEW PAPERS 2002, Vol 41, Iss 1,pp 73-74 Source item page count: 2
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29-char source abbrev: JPN J APPL PHYS PT 1
Record 21 of 248
Author(s):
Kaygorodov VA; Sedova IV; Sorokin SV; Sitnikova AA; NekrutkinaOV; Shubina TV; Toropov AA; Sorokin VS; Ivanov SV Molecular beam epitaxy of low-strained CdSe/CdMgSeheterostructures on InAs(001) substrates PHYSICA STATUS SOLIDI B-BASIC RESEARCH 2002, Vol 229,Iss 1, pp 19-23 Source item page count: 5
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29-char source abbrev: PHYS STATUS SOLIDI B-BASIC RE
Record 22 of 248
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Naranjo FB; Sanchez-Garcia MA; Calle F; Calleja E; Jenichen B;Ploog KH Strong localization in InGaN layers with high In content grown bymolecular-beam epitaxy APPLIED PHYSICS LETTERS 2002, Vol 80, Iss 2, pp 231-233 Source item page count: 3
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29-char source abbrev: APPL PHYS LETT
Record 23 of 248
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Mintairov AM; Kosel TH; Merz JL; Blagnov PA; Vlasov AS; UstinovVM; Cook RE Near-field magnetophotoluminescence spectroscopy of compositionfluctuations in InGaAsN PHYSICAL REVIEW LETTERS 2001, Vol 8727, Iss 27, art. no.
277401 Source item page count: 4
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29-char source abbrev: PHYS REV LETT
Record 24 of 248
Author(s):
Seong GY; Bang CY; Kim YD; Wang J; Aspnes DE; Koo BH; Yao T Spectroscopic ellipsometry study of InGaAs alloy films grown on InP JOURNAL OF THE KOREAN PHYSICAL SOCIETY 2001, Vol 39,pp S389-S392 Source item page count: 4
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Record 25 of 248
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Determination of band-gap bowing for AlxGa1-xN alloys PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 2001, Vol188, Iss 2, pp 789-792 Source item page count: 4
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29-char source abbrev: PHYS STATUS SOLIDI A-APPL RES
Record 26 of 248
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Ozgur U; Webb-Wood G; Everitt HO; Yun F; Morkoc H Systematic measurement of AlxGa1-xN refractive indices APPLIED PHYSICS LETTERS 2001, Vol 79, Iss 25, pp 4103-4105 Source item page count: 3
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Record 27 of 248
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Godo K; Makino H; Cho MW; Chang JH; Yamazaki Y; Yao T; ShenMY; Goto T Composition dependence of the energy gap of Zn1-x-yMgxBeySequaternary alloys nearly lattice matched to GaAs APPLIED PHYSICS LETTERS 2001, Vol 79, Iss 25, pp 4168-4170 Source item page count: 3
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29-char source abbrev: APPL PHYS LETT
Record 28 of 248
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Kaygorodov VA; Sorokin VS; Sedova IV; Nekrutkina OV; SorokinSV; Shubina TV; Toropov AA; Ivanov SV Cd(Mg)Se single layers and CdSe/CdMgSe heterostructures grown bymolecular beam epitaxy on InAs(001) substrates ACTA PHYSICA POLONICA A 2001, Vol 100, Iss 3, pp 443-450 Source item page count: 8
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Record 29 of 248
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Yu YM; Nam S; O B; Lee KS; Choi YD; Lee J; Yu PY Variation of band gap energy and photoluminescence characteristicswith Te composition of ZnS1-xTex epilayers grown by hot-wallepitaxy APPLIED SURFACE SCIENCE 2001, Vol 182, Iss 1-2, pp 159-166 Source item page count: 8
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29-char source abbrev: APPL SURF SCI
Record 30 of 248
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Zhou QY; Manasreh MO; Pophristic M; Guo S; Ferguson IT Observation of nitrogen vacancy in proton-irradiated AlxGa1-xN APPLIED PHYSICS LETTERS 2001, Vol 79, Iss 18, pp 2901-2903 Source item page count: 3
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Record 31 of 248
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Electronic structure of CuClxBr1-x, CuClxI1-x and CuBrxI1-x alloys SUPERLATTICES AND MICROSTRUCTURES 2001, Vol 30, Iss 2,pp 75-80 Source item page count: 6
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Record 32 of 248
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Band-gap bowing parameter of the InxGa1-xN derived fromtheoretical simulation JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULARPAPERS SHORT NOTES & REVIEW PAPERS 2001, Vol 40, Iss 5A,pp 3157-3158 Source item page count: 2
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29-char source abbrev: JPN J APPL PHYS PT 1
Record 33 of 248
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Composition and substrate temperature dependence of structural andoptical studies on ZnSexCdS1-x alloy films OPTICAL MATERIALS 2001, Vol 17, Iss 4, pp 483-489 Source item page count: 7
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29-char source abbrev: OPT MATER
Record 34 of 248
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Gotthold D; Govindaraju S; Reifsnider J; Kinsey G; Campbell J;Holmes A Molecular-beam epitaxy growth of Ga(In)NAs/GaAs heterostructuresfor photodiodes JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 2001, Vol19, Iss 4, pp 1400-1403 Source item page count: 4
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29-char source abbrev: J VAC SCI TECHNOL B
Record 35 of 248
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Pereira S; Correia MR; Monteiro T; Pereira E; Soares MR; Alves E Indium content determination related with structural and opticalproperties of InGaN layers JOURNAL OF CRYSTAL GROWTH 2001, Vol 230, Iss 3-4, pp448-453 Source item page count: 6
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29-char source abbrev: J CRYST GROWTH
Record 36 of 248
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Disseix P; Payen C; Leymarie J; Vasson A; Mollot F Thermally detected optical absorption, reflectance andphoto-reflectance of In(As,P)/InP quantum wells grown by gas sourcemolecular beam epitaxy OPTICAL MATERIALS 2001, Vol 17, Iss 1-2, pp 197-200 Source item page count: 4
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Record 37 of 248
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Ebling DG; Kirste L; Benz KW; Teofilov N; Thonke K; Sauer R Optical properties and ordering of AlxGa1-xN MBE-layers JOURNAL OF CRYSTAL GROWTH 2001, Vol 227, pp 453-457 Source item page count: 5
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29-char source abbrev: J CRYST GROWTH
Record 38 of 248
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Structural and optical properties of MBE grown GaNAs/GaAsquantum well structures JOURNAL OF CRYSTAL GROWTH 2001, Vol 227, pp 496-500 Source item page count: 5
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Record 39 of 248
Author(s):
Yoshino K; Mitani N; Sugiyama M; Chichibu SF; Komaki H; Ikari T Optical and electrical properties of AgIn(SSe)(2) crystals Source item page count: 8
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29-char source abbrev: PHYSICA B
Record 40 of 248
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Level set approach to simulation of feature profile evolution in a JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 2001, Vol19, Iss 3, pp 701-710 Source item page count: 10
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Record 41 of 248
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Band parameters for III-V compound semiconductors and their alloys JOURNAL OF APPLIED PHYSICS 2001, Vol 89, Iss 11, pp5815-5875 Source item page count: 61
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Record 42 of 248
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FLOWGO: a kinematic thermo-rheological model for lava flowing in achannel BULLETIN OF VOLCANOLOGY 2001, Vol 63, Iss 1, pp 20-44 Source item page count: 25
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Record 43 of 248
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Robinson PD; Lutfi HG; Hou YQ; Meyers CY 1,1-Di(9-fluorenyl)ethyl acetate, a by-product from the acetylation of9-fluorenyllithium ACTA CRYSTALLOGRAPHICA SECTION C-CRYSTALSTRUCTURE COMMUNICATIONS 2001, Vol 57, pp 582-584 Source item page count: 3
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Record 44 of 248
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O’Donnell KP; Martin RW; Trager-Cowan C; White ME; Esona K;Deatcher C; Middleton PG; Jacobs K; Van der Stricht W; Merlet C;Gil B; Vantomme A; Mosselmans JFW The dependence of the optical energies on InGaN composition MATERIALS SCIENCE AND ENGINEERING B-SOLID STATEMATERIALS FOR ADVANCED TECHNOLOGY 2001, Vol 82, Iss1-3, pp 194-196 Source item page count: 3
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29-char source abbrev: MATER SCI ENG B-SOLID STATE M
Record 45 of 248
Author(s):
Rincon CAD; Hernandez E; Alonso MI; Garriga M; Wasim SM;Rincon C; Leon M Optical transitions near the band edge in bulk CuInxGa1-xSe2 fromellipsometric measurements MATERIALS CHEMISTRY AND PHYSICS 2001, Vol 70, Iss 3, pp300-304 Source item page count: 5
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Record 46 of 248
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Duke SG; Salmon J; Blalock PD; Postma GN; Koufman JA Fascia augmentation of the vocal fold: Graft yield in the canine andpreliminary clinical experience LARYNGOSCOPE 2001, Vol 111, Iss 5, pp 759-764 Source item page count: 6
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Record 47 of 248
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Stepanov S; Wang WN; Yavich BS; Bougrov V; Rebane YT; ShreterYG Influence of Poisson’s ratio uncertainty on calculations of the bowingparameter for strained InGaN layers MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTORRESEARCH 2001, Vol 6, Iss 6, pp 1-8 Source item page count: 8
29-char source abbrev: MRS INTERNET J NITRIDE SEMI R
Record 48 of 248
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Structural and optical properties of ZnxCd1-xSe thin films PHYSICA B 2001, Vol 296, Iss 4, pp 312-318 Source item page count: 7
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Record 49 of 248
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Band-gap bowing calculation of SixSn1-x alloy INFRARED PHYSICS & TECHNOLOGY 2001, Vol 42, Iss 2, pp81-85 Source item page count: 5
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Record 50 of 248
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Teles LK; Furthmuller J; Scolfaro LMR; Leite JR; Bechstedt F Influence of composition fluctuations and strain on gap bowing inInxGa1-xN PHYSICAL REVIEW B 2001, Vol 6308, Iss 8, art. no. 085204 Source item page count: 5
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Record 51 of 248
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Wagner J; Obloh H; Kunzer M; Maier M; Kohler K; Johs B Dielectric function spectra of GaN, AlGaN, and GaN/AlGaNheterostructures JOURNAL OF APPLIED PHYSICS 2001, Vol 89, Iss 5, pp2779-2785 Source item page count: 7
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29-char source abbrev: J APPL PHYS
Record 52 of 248
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Electronic properties of Ga(In)NAs alloys MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTORRESEARCH 2001, Vol 6, Iss 2, art. no. 2 Source item page count: 19
29-char source abbrev: MRS INTERNET J NITRIDE SEMI R
Record 53 of 248
Author(s):
Chichibu SF; Sota T; Wada K; Brandt O; Ploog KH; DenBaars SP;Nakamura S Impact of internal electric field and localization effect on quantum wellexcitons in AlGaN/GaN/InGaN light emitting diodes PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 2001, Vol183, Iss 1, pp 91-98 Source item page count: 8
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29-char source abbrev: PHYS STATUS SOLIDI A-APPL RES
Record 54 of 248
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Some studies on structural and optical properties of ZnxCd1-xSe thinfilms Source item page count: 6
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29-char source abbrev: VACUUM
Record 55 of 248
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Matsumoto S; Yaguchi H; Kashiwase S; Hashimoto T; Yoshida S;Aoki D; Onabe K Optical characterization of metalorganic vapor-phase epitaxy-grownGaAs1-xNx alloys using spectroscopic ellipsometry JOURNAL OF CRYSTAL GROWTH 2000, Vol 221, pp 481-484 Source item page count: 4
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29-char source abbrev: J CRYST GROWTH
Record 56 of 248
Author(s):
Ivanov SV; Nekrutkina OV; Sorokin SV; Kaygorodov VA; ShubinaTV; Toropov AA; Kop’ev PS; Reuscher G; Wagner V; Geurts J; WaagA; Landwehr G BeCdSe as a ternary alloy for blue-green optoelectronic applications APPLIED PHYSICS LETTERS 2001, Vol 78, Iss 4, pp 404-406 Source item page count: 3
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29-char source abbrev: APPL PHYS LETT
Record 57 of 248
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Effect of nitrogen concentration on electronic energy bands ofGa1-xInxNyAs1-y alloys MICROELECTRONIC ENGINEERING 2000, Vol 54, Iss 3-4, pp277-286 Source item page count: 10
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Record 58 of 248
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Modeling the optical constants of AlxGa1-xN alloys JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN 2000, Vol 69,Iss 12, pp 4078-4086 Source item page count: 9
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29-char source abbrev: J PHYS SOC JPN
Record 59 of 248
Author(s):
Sik J; Schubert M; Leibiger G; Gottschalch V; Wagner G Band-gap energies, free carrier effects, and phonon modes in strainedGaNAs/GaAs and GaNAs/InAs/GaAs superlattice heterostructuresmeasured by spectroscopic ellipsometry JOURNAL OF APPLIED PHYSICS 2001, Vol 89, Iss 1, pp 294-305 Source item page count: 12
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29-char source abbrev: J APPL PHYS
Record 60 of 248
Author(s):
Jiang H; Zhao GY; Ishikawa H; Egawa T; Jimbo T; Umeno M Determination of exciton transition energy and bowing parameter ofAlGaN alloys in AlGaN/GaN heterostructure by means of reflectancemeasurement JOURNAL OF APPLIED PHYSICS 2001, Vol 89, Iss 2, pp1046-1052 Source item page count: 7
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29-char source abbrev: J APPL PHYS
Record 61 of 248
Author(s):
Lee H; Kim IY; Powell J; Aspnes DE; Lee S; Peiris F; Furdyna JK Dielectric function and bowing parameter of Zn1-xMgxSe andZn1-xBexSe alloys JOURNAL OF THE KOREAN PHYSICAL SOCIETY 2000, Vol 37,Iss 6, pp 1012-1016 Source item page count: 5
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29-char source abbrev: J KOREAN PHYS SOC
Record 62 of 248
Author(s):
Goano M; Bellotti E; Ghillino E; Garetto C; Ghione G; Brennan KF Band structure nonlocal pseudopotential calculation of the III-nitridewurtzite phase materials system. Part II. Ternary alloys AlxGa1-xN,InxGa1-xN, and InxAl1-xN JOURNAL OF APPLIED PHYSICS 2000, Vol 88, Iss 11, pp6476-6482 Source item page count: 7
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29-char source abbrev: J APPL PHYS
Record 63 of 248
Author(s):
Wagner J; Ramakrishnan H; Obloh H; Kunzer C; Kohler K; Johs B Spectroscopic ellipsometry analysis of InGaN/GaN and AlGaN/GaNheterostructures using a parametric dielectric function model MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTORRESEARCH 2000, Vol 5, art. no. W11.54 Source item page count: 6
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Record 64 of 248
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Optical gain of strained GaAsSb/GaAs quantum-well lasers: Aself-consistent approach JOURNAL OF APPLIED PHYSICS 2000, Vol 88, Iss 10, pp5554-5561 Source item page count: 8
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29-char source abbrev: J APPL PHYS
Record 65 of 248
Author(s):
Lee H; Kim SM; Seo BY; Seong EZ; Choi SH; Lee S; Furdyna JK Optical study of ZnSexTe1-x alloys using spectroscopic ellipsometry APPLIED PHYSICS LETTERS 2000, Vol 77, Iss 19, pp 2997-2999 Source item page count: 3
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29-char source abbrev: APPL PHYS LETT
Record 66 of 248
Author(s):
Su CH; Feth S; Zhu S; Lehoczky SL; Wang LJ Optical characterization of bulk ZnSeTe solid solutions JOURNAL OF APPLIED PHYSICS 2000, Vol 88, Iss 9, pp Source item page count: 5
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29-char source abbrev: J APPL PHYS
Record 67 of 248
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Mandibular helical axis pathways during mastication JOURNAL OF DENTAL RESEARCH 2000, Vol 79, Iss 8, pp1566-1572 Source item page count: 7
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29-char source abbrev: J DENT RES
Record 68 of 248
Author(s):
Disseix P; Payen C; Leymarie J; Vasson A; Mollot F Thermally detected optical absorption, reflectance, andphotoreflectance of In(As,P)/InP quantum wells grown by gas sourcemolecular beam epitaxy JOURNAL OF APPLIED PHYSICS 2000, Vol 88, Iss 8, pp4612-4618 Source item page count: 7
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29-char source abbrev: J APPL PHYS
Record 69 of 248
Author(s):
Chauvet C; Tournie E; Vennegues P; Faurie JP Molecular beam epitaxy of ZnxBe1-xSe: Influence of the substratenature and epilayer properties JOURNAL OF ELECTRONIC MATERIALS 2000, Vol 29, Iss 6, pp883-886 Source item page count: 4
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29-char source abbrev: J ELECTRON MATER
Record 70 of 248
Author(s):
Tirado-Mejia L; Marin-Hurtado JI; Ariza-Calderon H Influence of disorder effects on Cd1-xZnxTe optical properties PHYSICA STATUS SOLIDI B-BASIC RESEARCH 2000, Vol 220,Iss 1, pp 255-260 Source item page count: 6
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29-char source abbrev: PHYS STATUS SOLIDI B-BASIC RE
Record 71 of 248
Author(s):
Takada T; Che SB; Nomura I; Kikuchi A; Shimomura K; Kishino K Novel II-VI light emitting diodes fabricated on InP substrates applyingwide-gap and highly p-dopable BeZnTe for p-cladding layers PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 2000, Vol180, Iss 1, pp 37-43 Source item page count: 7
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29-char source abbrev: PHYS STATUS SOLIDI A-APPL RES
Record 72 of 248
Author(s):
Siozade L; Leymarie J; Disseix P; Vasson A; Mihailovic M; GrandjeanN; Leroux M; Massies J Modelling of thermally detected optical absorption and luminescenceof (In,Ga)N/GaN heterostructures SOLID STATE COMMUNICATIONS 2000, Vol 115, Iss 11, pp575-579 Source item page count: 5
29-char source abbrev: SOLID STATE COMMUN
Record 73 of 248
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Measurements and efficient simulations of bowed bars JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA 2000,Vol 108, Iss 1, pp 379-388 Source item page count: 10
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29-char source abbrev: J ACOUST SOC AMER
Record 74 of 248
Author(s):
Che SB; Nomura I; Shinozaki W; Kikuchi A; Shimomura K; KishinoK Wide bandgap over 3 eV and high p-doping BeZnTe grown on InPsubstrates by molecular beam epitaxy JOURNAL OF CRYSTAL GROWTH 2000, Vol 214, pp 321-324 Source item page count: 4
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29-char source abbrev: J CRYST GROWTH
Record 75 of 248
Author(s):
Wolverson D; Karimov OZ; Davies JJ; Irvine SJC; Ahmed MU; TelferSA; Prior KA; Ogata K; Fujita S; Fujita S Band structure parameters of Zn1-xCdxSe investigated by spin-flipRaman spectroscopy JOURNAL OF CRYSTAL GROWTH 2000, Vol 214, pp 469-473 Source item page count: 5
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29-char source abbrev: J CRYST GROWTH
Record 76 of 248
Author(s):
Lee H; Kim IY; Powell J; Aspnes DE; Lee S; Peiris F; Furdyna JK Visible-near ultraviolet ellipsometric study of Zn1-xMgxSe and JOURNAL OF APPLIED PHYSICS 2000, Vol 88, Iss 2, pp 878-882 Source item page count: 5
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29-char source abbrev: J APPL PHYS
Record 77 of 248
Author(s):
Wada M; Araki S; Kudou T; Umezawa T; Nakajima S; Ueda T Temperature dependence of the band gap in InAsyP1-y APPLIED PHYSICS LETTERS 2000, Vol 76, Iss 19, pp 2722-2724 Source item page count: 3
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The optical and vibrational properties of the quaternary chalcopyritesemiconductor alloy AgxCu1-xGaS2 JOURNAL OF APPLIED PHYSICS 2000, Vol 87, Iss 8, pp3815-3822 Source item page count: 8
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Nature of the band gap in Zn1-xBexSe alloys PHYSICAL REVIEW B 2000, Vol 61, Iss 8, pp 5332-5336 Source item page count: 5
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Pseudopotential calculations of electronic properties of Ga1-xInxNalloys with zinc-blende structure SOLID-STATE ELECTRONICS 2000, Vol 44, Iss 3, pp 501-507 Source item page count: 7
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High aspect ratio silicon trench fabrication by inductively coupledplasma MICROSYSTEM TECHNOLOGIES 2000, Vol 6, Iss 3, pp 106-108 Source item page count: 3
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Ferromagnetic inclusions in geomaterials: Implications JOURNAL OF GEOTECHNICAL AND GEOENVIRONMENTALENGINEERING 2000, Vol 126, Iss 2, pp 167-179 Source item page count: 13
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Structural, compositional, optical, and electrical properties ofsolution-grown ZnxCd1-xS films JOURNAL OF THE ELECTROCHEMICAL SOCIETY 2000, Vol147, Iss 1, pp 214-218 Source item page count: 5
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Goldhahn R; Scheiner J; Shokhovets S; Frey T; Kohler U; As DJ;Lischka K Refractive index and gap energy of cubic InxGa1-xN APPLIED PHYSICS LETTERS 2000, Vol 76, Iss 3, pp 291-293 Source item page count: 3
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Selfconsistent calculation of disorder-induced corrections to the VCAband-structures of AlxGa1-xAs and AlxGa1-xP PHYSICA STATUS SOLIDI B-BASIC RESEARCH 1999, Vol 216,Iss 2, pp 961-973 Source item page count: 13
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Tadjer A; Abbar B; Rezki M; Dufour JP; Aourag H; Certier M Charge density calculations for strained zinc blende GaN, InN and AlN MATERIALS CHEMISTRY AND PHYSICS 2000, Vol 62, Iss 1, pp75-80 Source item page count: 6
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Numerical simulation of metallic thermal protection system panelbowing JOURNAL OF SPACECRAFT AND ROCKETS 1999, Vol 36, Iss 6,pp 842-849 Source item page count: 8
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Goldhahn R; Scheiner J; Shokhovets S; Frey T; Kohler U; As DJ;Lischka K Determination of optical constants for cubic InxGa1-xN layers PHYSICA STATUS SOLIDI B-BASIC RESEARCH 1999, Vol 216,Iss 1, pp 265-268 Source item page count: 4
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Schwegler V; Kirchner C; Seyboth M; Kamp M; Ebeling KJ; MelnikYV; Nikolaev AE; Tsvetkov D; Dmitriev VA GaN/SiC quasi-substrates for GaN-based LEDs PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 1999, Vol176, Iss 1, pp 99-102 Source item page count: 4
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Onabe K; Aoki D; Wu J; Yaguchi H; Shiraki Y MOVPE growth and luminescence properties of GaAsN alloys withhigher nitrogen concentrations PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 1999, Vol176, Iss 1, pp 231-235 Source item page count: 5
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Ricciardi MJ; Bossone E; Bach DS; Armstrong WF; Rubenfire M Echocardiographic predictors of an adverse response to a nifedipinetrial in primary pulmonary hypertension - Diminished left ventricularsize and leftward ventricular septal bowing CHEST 1999, Vol 116, Iss 5, pp 1218-1223 Source item page count: 6
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Gehrsitz S; Sigg H; Herres N; Bachem K; Kohler K; Reinhart FK Compositional dependence of the elastic constants and the latticeparameter of AlxGa1-xAs PHYSICAL REVIEW B 1999, Vol 60, Iss 16, pp 11601-11610 Source item page count: 10
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Parker CA; Roberts JC; Bedair SM; Reed MJ; Liu SX; El-Masry NA;Robins LH Optical band gap dependence on composition and thickness ofInxGa1-xN (0 < x < 0.25) grown on GaN APPLIED PHYSICS LETTERS 1999, Vol 75, Iss 17, pp 2566-2568 Source item page count: 3
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The effect of compositional disorder on electronic band structure inGaxIn1-xAsySb1-y alloys lattice matched to GaSb SUPERLATTICES AND MICROSTRUCTURES 1999, Vol 26, Iss 4,pp 279-287 Source item page count: 9
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Band-gap and k.p. parameters for GaAlN and GaInN alloys JOURNAL OF APPLIED PHYSICS 1999, Vol 86, Iss 7, pp3768-3772 Source item page count: 5
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Kim JW; Son CS; Choi IH; Park YK; Kim YT; Ambacher O;Stutzmann M Characterization of the absorption edges of epitaxial AlGaN grown byplasma-induced molecular beam epitaxy JOURNAL OF THE KOREAN PHYSICAL SOCIETY 1999, Vol 35,pp S279-S282 Source item page count: 4
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Laaksoharju M; Tullborg EL; Wikberg P; Wallin B; Smellie J Hydrogeochemical conditions and evolution at the Aspo HRL, Sweden APPLIED GEOCHEMISTRY 1999, Vol 14, Iss 7, pp 835-859 Source item page count: 25
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Yoshino K; Iwamoto M; Yokoyama H; Fukuyama A; Maeda K; NikiS; Ikari T Piezoelectric photoacoustic and photoluminescence properties ofCuInXGa1-XSe2 alloys JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULARPAPERS SHORT NOTES & REVIEW PAPERS 1999, Vol 38, Iss 5B,pp 3171-3174 Source item page count: 4
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Kim JW; Park YK; Kim YT; Son CS; Choi IH; Ambacher O;Stutzmann M Transmission spectra of InGaN single quantum wells and InGaN GaNheterostructures grown by metalorganic chemical vapor deposition JOURNAL OF THE KOREAN PHYSICAL SOCIETY 1999, Vol 35,Iss 1, pp 42-45 Source item page count: 4
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Yamaguchi T; Yamamoto Y; Tanaka T; Yoshida A Preparation and characterization of (Cd,Zn)S thin films by chemicalbath deposition for photovoltaic devices THIN SOLID FILMS 1999, Vol 344, pp 516-519 Source item page count: 4
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Bellani V; Geddo M; Guizzetti G; Franchi S; Magnanini R Thermoreflectance study of the direct optical gap in epitaxialAlxGa1-xSb (x <= 0.5) PHYSICAL REVIEW B 1999, Vol 59, Iss 19, pp 12272-12274 Source item page count: 3
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Van de Walle CG; McCluskey MD; Master CP; Romano LT; JohnsonNM Large and composition-dependent band gap bowing in InxGa1-xNalloys MATERIALS SCIENCE AND ENGINEERING B-SOLID STATEMATERIALS FOR ADVANCED TECHNOLOGY 1999, Vol 59, Iss1-3, pp 274-278 Source item page count: 5
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Chichibu SF; Abare AC; Mack MP; Minsky MS; Deguchi T; Cohen D;Kozodoy P; Fleischer SB; Keller S; Speck JS; Bowers JE; Hu E;Mishra UK; Coldren LA; DenBaars SP; Wada K; Sota T; Nakamura S Optical properties of InGaN quantum wells MATERIALS SCIENCE AND ENGINEERING B-SOLID STATEMATERIALS FOR ADVANCED TECHNOLOGY 1999, Vol 59, Iss1-3, pp 298-306 Source item page count: 9
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Lee SR; Wright AF; Crawford MH; Petersen GA; Han J; Biefeld RM APPLIED PHYSICS LETTERS 1999, Vol 74, Iss 22, pp 3344-3346 Source item page count: 3
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Ochalski TJ; Gil B; Lefebvre P; Grandjean N; Leroux M; Massies J;Nakamura S; Morkoc H Photoreflectance investigations of the bowing parameter in AlGaNalloys lattice-matched to GaN APPLIED PHYSICS LETTERS 1999, Vol 74, Iss 22, pp 3353-3355 Source item page count: 3
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Yang TJ; Gopalan V; Swart PJ; Mohideen U Direct observation of pinning and bowing of a single ferroelectricdomain wall PHYSICAL REVIEW LETTERS 1999, Vol 82, Iss 20, pp 4106-4109 Source item page count: 4
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Monagle K; Dai GP; Chu A; Burnham RS; Snyder RE Quantitative MR imaging of carpal tunnel syndrome AMERICAN JOURNAL OF ROENTGENOLOGY 1999, Vol 172, Iss6, pp 1581-1586 Source item page count: 6
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Prystawko P; Leszczynski M; Sliwinski A; Teisseyre H; Suski T;Bockowski M; Porowski S; Domagala J; Kirchner C; Pelzmann A;Schauler M; Kamp M Epitaxy of ternary nitrides on GaN single crystals JOURNAL OF CRYSTAL GROWTH 1999, Vol 199, pp 1061-1065 Source item page count: 5
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Record 109 of 248
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Steude G; Meyer BK; Goldner A; Hoffmann A; Bertram F; Christen J;Amano H; Akasaki I Optical investigations of AlGaN on GaN epitaxial films APPLIED PHYSICS LETTERS 1999, Vol 74, Iss 17, pp 2456-2458 Source item page count: 3
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Record 110 of 248
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Chichibu SF; Sota T; Wada K; DenBaars SP; Nakamura S Spectroscopic studies in InGaN quantum wells MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTORRESEARCH 1999, Vol 4, art. no. G2.7 Source item page count: 13
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Record 111 of 248
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Wagner J; Ramakrishnan A; Behr D; Maier M; Herres N; Kunzer M;Obloh H; Bachem KH Composition dependence of the band gap energy of InxGa1-xN layerson GaN (x <= 0.15) grown by metal-organic chemical vapor deposition MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTORRESEARCH 1999, Vol 4, art. no. G2.8 Source item page count: 6
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Record 112 of 248
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Steude G; Christmann T; Meyer BK; Goeldner A; Hoffmann A;Bertram F; Christen J; Amano H; Akasaki I Optical investigations of AlGaN on GaN epitaxial films MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTORRESEARCH 1999, Vol 4, art. no. G3.26 Source item page count: 6
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Record 113 of 248
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Fritsch J; Sankey OF; Schmidt KE; Page JB First-principles local-orbital calculation of the structural and electronicproperties of ordered and random alloys of GaN and AlN JOURNAL OF PHYSICS-CONDENSED MATTER 1999, Vol 11, Iss11, pp 2351-2361 Source item page count: 11
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Secondary flow and enhancement of heat transfer in horizontalparallel-plate and convergent channels heating from below INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER1999, Vol 42, Iss 14, pp 2629-2647 Source item page count: 19
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Morphologic changes in chronic high-pressure experimental glaucomain rhesus monkeys JOURNAL OF GLAUCOMA 1999, Vol 8, Iss 1, pp 56-71 Source item page count: 16
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Reexamination of N composition dependence of coherently grownGaNAs band gap energy with high-resolution x-ray diffractionmapping measurements APPLIED PHYSICS LETTERS 1999, Vol 74, Iss 9, pp 1254-1256 Source item page count: 3
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Kim JS; Choi CI; Kim MS; Bok CK; Kim HS; Baik KH Implementation of sub-150 nm contact hole pattern by resist flowprocess JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULARPAPERS SHORT NOTES & REVIEW PAPERS 1998, Vol 37, Iss12B, pp 6863-6868 Source item page count: 6
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Anomalous band gap bowing in AlAs1-xNx alloys SOLID STATE COMMUNICATIONS 1999, Vol 109, Iss 6, pp383-388 Source item page count: 6
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Record 119 of 248
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Strong band gap narrowing in quasi-binary (GaSb)(1-x)(InAs)(x)crystals grown from melt JOURNAL OF CRYSTAL GROWTH 1999, Vol 197, Iss 1-2, pp 1-6 Source item page count: 6
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An approximation to the optical absorption spectra of the ternarycompound ZnSexTe1-x REVISTA MEXICANA DE FISICA 1998, Vol 44, pp 119-121 Source item page count: 3
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Bouhafs B; Heireche H; Sekkal W; Aourag H; Ferhat M; Certier M Electronic and optical properties of copper halide mixed crystalsCuBr1-xIx PHYSICA STATUS SOLIDI B-BASIC RESEARCH 1998, Vol 209,Iss 2, pp 339-352 Source item page count: 14
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Record 122 of 248
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Wetzel C; Nitta S; Takeuchi T; Yamaguchi S; Amano H; Akasaki L On the bandstructure in GaInN/GaN heterostructures - Strain, band gapand piezoelectric effect MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTORRESEARCH 1998, Vol 3, Iss 31, art. no. 31 Source item page count: 16
29-char source abbrev: MRS INTERNET J NITRIDE SEMI R
Record 123 of 248
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Band structure of GaP1-xNx (x = 0.25, 0.5, 0.75) ordered alloys:Semiempirical tight-binding calculation JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULARPAPERS SHORT NOTES & REVIEW PAPERS 1998, Vol 37, Iss 9A,pp 4680-4686 Source item page count: 7
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Record 124 of 248
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Pozina G; Ivanov IG; Monemar B; Thordson JV; Andersson TG Optical properties of GaNAs grown by MBE MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTORRESEARCH 1998, Vol 3, Iss 29, art. no. 29 Source item page count: 8
29-char source abbrev: MRS INTERNET J NITRIDE SEMI R
Record 125 of 248
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Kim KJ; Lee MH; Bahng JH; Shim K; Choe BD Optical constants and electronic interband transitions of disorderedGaAs1-xPx alloys JOURNAL OF APPLIED PHYSICS 1998, Vol 84, Iss 7, pp3696-3699 Source item page count: 4
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Record 126 of 248
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Pozina G; Ivanov I; Monemar B; Thordson JV; Andersson TG Properties of molecular-beam epitaxy-grown GaNAs from opticalspectroscopy JOURNAL OF APPLIED PHYSICS 1998, Vol 84, Iss 7, pp3830-3835 Source item page count: 6
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Record 127 of 248
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Romano LT; Krusor BS; McCluskey MD; Bour DP; Nauka K Structural and optical properties of pseudomorphic InxGa1-xN alloys APPLIED PHYSICS LETTERS 1998, Vol 73, Iss 13, pp 1757-1759 Source item page count: 3
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Record 128 of 248
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Wetzel C; Takeuchi T; Yamaguchi S; Katoh H; Amano H; Akasaki I Optical band gap in Ga1-xInxN (O < x < 0.2) on GaN byphotoreflection spectroscopy APPLIED PHYSICS LETTERS 1998, Vol 73, Iss 14, pp 1994-1996 Source item page count: 3
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Record 129 of 248
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Chichibu SF; Abare AC; Minsky MS; Keller S; Fleischer SB; BowersJE; Hu E; Mishra UK; Coldren LA; DenBaars SP; Sota T Effective band gap inhomogeneity and piezoelectric field inInGaN/GaN multiquantum well structures APPLIED PHYSICS LETTERS 1998, Vol 73, Iss 14, pp 2006-2008 Source item page count: 3
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Atomic-scale compositional structure of InAsP/InP and InNAsP/InPheterostructures grown by molecular-beam epitaxy JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 1998, Vol16, Iss 4, pp 2395-2398 Source item page count: 4
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Record 131 of 248
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McCluskey MD; Van de Walle CG; Master CP; Romano LT; JohnsonNM Large band gap bowing of InxGa1-xN alloys APPLIED PHYSICS LETTERS 1998, Vol 72, Iss 21, pp 2725-2726 Source item page count: 2
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Record 132 of 248
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Grandjean N; Massies J; Leroux M; De Mierry P Band edge versus deep luminescence of InxGa1-xN layers grown by APPLIED PHYSICS LETTERS 1998, Vol 72, Iss 24, pp 3190-3192 Source item page count: 3
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Record 133 of 248
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Duda LC; Stagarescu CB; Downes J; Smith KE; Korakakis D;Moustakas TD; Guo JH; Nordgren J Density of states, hybridization, and band-gap evolution in AlxGa1-xNalloys PHYSICAL REVIEW B 1998, Vol 58, Iss 4, pp 1928-1933 Source item page count: 6
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Record 134 of 248
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Heireche H; Bouhafs B; Aourag H; Ferhat M; Certier M Electronic and optical properties of copper halides mixed crystalCuCl1-xBrx JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 1998, Vol59, Iss 6-7, pp 997-1007 Source item page count: 11
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Agrawal BK; Yadav PS; Srivastava R; Agrawal S Ab initio study of anomalous band-gap bowing in GaAs1-xNx alloys JOURNAL OF PHYSICS-CONDENSED MATTER 1998, Vol 10, Iss21, pp 4597-4607 Source item page count: 11
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Record 136 of 248
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Iwata K; Asahi H; Asami K; Kuroiwa R; Gonda S GaN-rich side of GaNAs grown by gas source molecular beam epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULARPAPERS SHORT NOTES & REVIEW PAPERS 1998, Vol 37, Iss 3B,pp 1436-1439 Source item page count: 4
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Record 137 of 248
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Takeuchi K; Miyamoto T; Kageyama T; Koyama F; Iga K Chemical beam epitaxy growth and characterization of GaNAs/GaAs JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULARPAPERS SHORT NOTES & REVIEW PAPERS 1998, Vol 37, Iss 3B,pp 1603-1607 Source item page count: 5
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Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs withdirect band gap up to 2.0 eV APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING1998, Vol 66, Iss 5, pp 565-567 Source item page count: 3
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Record 139 of 248
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Bouhafs B; Heireche H; Sekkal W; Aourag H; Certier M Electronic and optical properties of copper halides mixed crystalCuCl1-xIx PHYSICS LETTERS A 1998, Vol 240, Iss 4-5, pp 257-264 Source item page count: 8
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Record 140 of 248
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Zaoui A; Certier M; Ferhat M; Pages O; Aourag H Disorder effects on electronic and optical properties in ZnSexTe1-x JOURNAL OF CRYSTAL GROWTH 1998, Vol 185, pp 1090-1094 Source item page count: 5
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Record 141 of 248
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III-V-N compounds for infrared applications MATERIALS SCIENCE AND ENGINEERING B-SOLID STATEMATERIALS FOR ADVANCED TECHNOLOGY 1997, Vol 50, Iss1-3, pp 148-152 Source item page count: 5
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29-char source abbrev: MATER SCI ENG B-SOLID STATE M
Record 142 of 248
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Pozina G; Ivanov I; Monemar B; Thordson J; Andersson TG Optical characterization of MBE-grown GaNAs MATERIALS SCIENCE AND ENGINEERING B-SOLID STATEMATERIALS FOR ADVANCED TECHNOLOGY 1997, Vol 50, Iss1-3, pp 153-156 Source item page count: 4
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Record 143 of 248
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Zaoui A; Certier M; Ferhat M; Pages O; Aourag H Lattice and electronic structure properties of (AlN)(x)(SiC)(1-x)semiconducting alloy PHYSICA STATUS SOLIDI B-BASIC RESEARCH 1998, Vol 205,Iss 2, pp 587-594 Source item page count: 8
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PHYSICAL REVIEW B 1998, Vol 57, Iss 4, pp 2257-2263 Source item page count: 7
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Bouhafs B; Aourag H; Ferhat M; Zaoui A; Certier M Theoretical analysis of disorder effects on electronic and opticalproperties in InGaAsP quaternary alloy JOURNAL OF APPLIED PHYSICS 1997, Vol 82, Iss 10, pp4923-4930 Source item page count: 8
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29-char source abbrev: J APPL PHYS
Record 146 of 248
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Brunner D; Angerer H; Bustarret E; Freudenberg F; Hopler R;Dimitrov R; Ambacher O; Stutzmann M Optical constants of epitaxial AlGaN films and their temperaturedependence JOURNAL OF APPLIED PHYSICS 1997, Vol 82, Iss 10, pp5090-5096 Source item page count: 7
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Lattice parameter and Raman spectra of isotopically mixed diamond PHYSICAL REVIEW B 1997, Vol 56, Iss 18, pp 11472-11476 Source item page count: 5
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The effect of the violation of Vegard’s law on the optical bowing inSi1-xGex alloys PHYSICS LETTERS A 1997, Vol 234, Iss 6, pp 493-497 Source item page count: 5
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29-char source abbrev: PHYS LETT A
Record 149 of 248
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Ambacher O; Arzberger M; Brunner D; Angerer H; Freudenberg F;Esser N; Wethkamp T; Wilmers K; Richter W; Stutzmann M MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTORRESEARCH 1997, Vol 2, Iss 22, art. no. 22 Source item page count: 11
29-char source abbrev: MRS INTERNET J NITRIDE SEMI R
Record 150 of 248
Author(s):
Angerer H; Brunner D; Freudenberg F; Ambacher O; Stutzmann M;Hopler R; Metzger T; Born E; Dollinger G; Bergmaier A; Karsch S;Korner HJ Determination of the Al mole fraction and the band gap bowing ofepitaxial AlxGa1-xN films APPLIED PHYSICS LETTERS 1997, Vol 71, Iss 11, pp 1504-1506 Source item page count: 3
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Omori K; Slavit DH; Matos C; Kojima H; Kacker A; Blaugrund SM Vocal fold atrophy: Quantitative glottic measurement and vocalfunction ANNALS OF OTOLOGY RHINOLOGY AND LARYNGOLOGY1997, Vol 106, Iss 7, pp 544-551 Source item page count: 8
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Gonda S; Asahi H; Iwata K; Kuroiwa R; Asami K GaN and related nitrides by gas source MBE using ion-removedradical cell JOURNAL OF THE KOREAN PHYSICAL SOCIETY 1997, Vol 30,pp S21-S25 Source item page count: 5
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Traynor NJ; Warburton RJ; Snelling MJ; Harley RT Highly nonlinear Zeeman splitting of excitons in semiconductorquantum wells PHYSICAL REVIEW B 1997, Vol 55, Iss 23, pp 15701-15705 Source item page count: 5
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Record 154 of 248
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Heating and phase transitions of dust-plasma crystals in a flowingplasma PHYSICAL REVIEW E 1997, Vol 55, Iss 6, pp 7495-7506 Source item page count: 12
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Record 155 of 248
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Leymarie J; Disseix P; Rezki M; Monier C; Vasson A; Vasson AM Conduction band offset ratio of the (In,Ga)As/GaAs system and MATERIALS SCIENCE AND ENGINEERING B-SOLID STATEMATERIALS FOR ADVANCED TECHNOLOGY 1997, Vol 44, Iss1-3, pp 147-150 Source item page count: 4
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Record 156 of 248
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Empirical pseudo-potential calculations in GaAs1-xNx and AlAs1-xNxordered alloys PHYSICA STATUS SOLIDI B-BASIC RESEARCH 1997, Vol 201,Iss 1, pp 117-134 Source item page count: 18
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Makimoto T; Saito H; Nishida T; Kobayashi N Excitonic luminescence and absorption in dilute GaAs1-xNx alloy(x<0.3%) APPLIED PHYSICS LETTERS 1997, Vol 70, Iss 22, pp 2984-2986 Source item page count: 3
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Si1-x-yGexCy alloy band structures by linear combination of atomicorbitals JOURNAL OF APPLIED PHYSICS 1997, Vol 81, Iss 10, pp6773-6780 Source item page count: 8
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Record 159 of 248
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Acceptance limits for the duration of pre-Helmholtz transients inbowed string attacks JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA 1997,Vol 101, Iss 5, pp 2903-2913 Source item page count: 11
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Record 160 of 248
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Bremser MD; Perry WG; Zheleva T; Edwards NV; Nam OH; ParikhN; Aspnes DE; Davis RF Growth, doping and characterization of AlxGa1-xN thin film alloys on6H-SiC(0001) substrates MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTORRESEARCH 1996, Vol 1, Iss 1-46, art. no. 8 Source item page count: 13
29-char source abbrev: MRS INTERNET J NITRIDE SEMI R
Record 161 of 248
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Temperature-composition dependence of the bandgap and possiblenon-complanar structures in GaN-AlN, GaN-InN and InN-AlN mixedcrystals MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTORRESEARCH 1997, Vol 2, Iss 1-5, art. no. 3 Source item page count: 9
29-char source abbrev: MRS INTERNET J NITRIDE SEMI R
Record 162 of 248
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Bremser MD; Perry WG; Zheleva T; Edwards NV; Nam OH; ParikhN; Aspnes DE; Davis RF Growth, doping and characterization of AlxGa1-xN thin film alloys on6H-SiC(0001) substrates DIAMOND AND RELATED MATERIALS 1997, Vol 6, Iss 2-4, pp196-201 Source item page count: 6
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Tight-binding calculation of electronic structures of InNAs orderedalloys JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS1997, Vol 36, Iss 3B, pp L320-L322 Source item page count: 3
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Record 164 of 248
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Bowing parameter of the band-gap energy of GaNxAs1-x APPLIED PHYSICS LETTERS 1997, Vol 70, Iss 12, pp 1608-1610 Source item page count: 3
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Record 165 of 248
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Takeuchi T; Takeuchi H; Sota S; Sakai H; Amano H; Akasaki I Optical properties of strained AlGaN and GaInN on GaN JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS1997, Vol 36, Iss 2B, pp L177-L179 Source item page count: 3
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Pavlin CJ; Rutnin SS; Devenyi R; Wand M; Foster FS Supraciliary effusions and ciliary body thickening after scleralbuckling procedures OPHTHALMOLOGY 1997, Vol 104, Iss 3, pp 433-438 Source item page count: 6
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Energy gap versus alloy composition and temperature in GaxIn1-xSb PHYSICA STATUS SOLIDI B-BASIC RESEARCH 1997, Vol 199,Iss 2, pp 403-416 Source item page count: 14
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SOLID-STATE ELECTRONICS 1997, Vol 41, Iss 2, pp 195-199 Source item page count: 5
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Semi-empirical tight-binding calculation of the electronic structure ofGaP1-xNx (x=0.25, 0.5, 0.75) alloys SOLID-STATE ELECTRONICS 1997, Vol 41, Iss 2, pp 267-269 Source item page count: 3
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Kamata A; Yoshida H; Chichibu S; Nakanishi H Growth and doping characteristics of ZnSeTe epilayers by MOCVD JOURNAL OF CRYSTAL GROWTH 1997, Vol 170, Iss 1-4, pp518-522 Source item page count: 5
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Watanabe K; Litz MT; Korn M; Ossau W; Waag A; Landwehr G;Schussler U Optical properties of ZnTe/Zn1-xMgxSeyTe1-y quantum wells andepilayers grown by molecular beam epitaxy JOURNAL OF APPLIED PHYSICS 1997, Vol 81, Iss 1, pp 451-455 Source item page count: 5
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Electronic structure and optical properties of the quaternary alloyGa1-xAlxAsySb1-y MATERIALS SCIENCE AND ENGINEERING B-SOLID STATEMATERIALS FOR ADVANCED TECHNOLOGY 1996, Vol 41, Iss3, pp 314-321 Source item page count: 8
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29-char source abbrev: MATER SCI ENG B-SOLID STATE M
Record 173 of 248
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Electronic structure of GaP1-xNx alloys determined usingpseudopotentials and gaussian orbitals JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULARPAPERS SHORT NOTES & REVIEW PAPERS 1996, Vol 35, Iss 11,pp 5602-5606 Source item page count: 5
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Microstructural and elastic properties of silicon-germanium-carbonalloys APPLIED SURFACE SCIENCE 1996, Vol 102, pp 12-16 Source item page count: 5
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The bowed string as a nonlinear dynamical system ACUSTICA 1996, Vol 82, Iss 4, pp 657-664 Source item page count: 8
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Yamamoto Y; Yamaguchi T; Demizu Y; Tanaka T; Yoshida A Fabrication and characterization of CuIn(SxSe1-x)(2) thin filmsdeposited by rf sputtering THIN SOLID FILMS 1996, Vol 282, Iss 1-2, pp 372-374 Source item page count: 3
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Castaing O; Granger R; Benhlal JT; Triboulet R The dielectric function and interband transitions in Cd1-xZnxTe JOURNAL OF PHYSICS-CONDENSED MATTER 1996, Vol 8, Iss31, pp 5757-5768 Source item page count: 12
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ElNahass MM; Khalifa BA; ElRahman AMA; ElAriny R Structural and optical properties of ZnSexTe1-x solid solutions inthin-film form APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING1996, Vol 63, Iss 1, pp 81-86 Source item page count: 6
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Development of finite element analysis code SPOTBOW for predictionof local velocity and temperature fields around distorted fuel pin inLMFBR assemblies JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY 1996,Vol 33, Iss 5, pp 429-438 Source item page count: 10
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Kinematic analysis of Toxoplasma gondii motility CELL MOTILITY AND THE CYTOSKELETON 1996, Vol 34, Iss 2,pp 152-163 Source item page count: 12
29-char source abbrev: CELL MOTILITY CYTOSKEL
Record 181 of 248
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Karnthaler HP; Muhlbacher ET; Rentenberger C The influence of the fault energies on the anomalous mechanicalbehaviour of Ni3Al alloys ACTA MATERIALIA 1996, Vol 44, Iss 2, pp 547-560 Source item page count: 14
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Structural and optical studies on vacuum-evaporated ZnSexCdS1-xalloy films JOURNAL OF ALLOYS AND COMPOUNDS 1996, Vol 234, Iss 1,pp 48-51 Source item page count: 4
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29-char source abbrev: J ALLOYS COMPOUNDS
Record 183 of 248
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Beaudoin M; Bensaada A; Leonelli R; Desjardins P; Masut RA; IsnardL; Chennouf A; LEsperance G Self-consistent determination of the band offsets in InAsxP1-x/InPstrained-layer quantum wells and the bowing parameter of bulkInAsxP1-x PHYSICAL REVIEW B 1996, Vol 53, Iss 4, pp 1990-1996 Source item page count: 7
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Golob DS; McAlister WH; Mills BG; Fedde KN; Reinus WR;Teitelbaum SL; Beeki S; Whyte MP Juvenile Paget Disease: Life-long features of a mildly affected youngwoman JOURNAL OF BONE AND MINERAL RESEARCH 1996, Vol 11,Iss 1, pp 132-142 Source item page count: 11
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BOUHAFS B; BENKABOU F; FERHAT M; KHELIFA B; DUFOURJP; AOURAG H ENERGY-BAND STRUCTURE CALCULATION OF GEXSN1-XAND SIXSN1-X ALLOYS INFRARED PHYSICS & TECHNOLOGY 1995, Vol 36, Iss 6, pp967-972 Source item page count: 6
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Record 186 of 248
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BAND-STRUCTURE CALCULATIONS OF INXGA1-XSB UNDERPRESSURE INFRARED PHYSICS & TECHNOLOGY 1995, Vol 36, Iss 6, pp973-980 Source item page count: 8
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DERIVATIVE SPECTRA OF POLYCRYSTALLINE ZN1-XCDXSETHIN-FILMS SOLID STATE COMMUNICATIONS 1995, Vol 96, Iss 8, pp589-592 Source item page count: 4
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THE TRANSIENT-BEHAVIOR OF MODELS OF BOWED-STRINGMOTION Source item page count: 15
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ABID H; BADI N; DRIZ M; BOUARISSA N; BENKABOU KH;KHELIFA B; AOURAG H ELECTRONIC-STRUCTURE OF THE QUATERNARY ALLOYGAXIN1-XASYP1-Y MATERIALS SCIENCE AND ENGINEERING B-SOLID STATEMATERIALS FOR ADVANCED TECHNOLOGY 1995, Vol 33, Iss2-3, pp 133-139 Source item page count: 7
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29-char source abbrev: MATER SCI ENG B-SOLID STATE M
Record 190 of 248
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BAND OFFSETS AND OPTICAL BOWINGS OFCHALCOPYRITES AND ZN-BASED II-VI ALLOYS JOURNAL OF APPLIED PHYSICS 1995, Vol 78, Iss 6, pp3846-3856 Source item page count: 11
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DIRECT-BAND-GAP ENERGY OF SEMICONDUCTORS INFRARED PHYSICS & TECHNOLOGY 1995, Vol 36, Iss 5, pp Source item page count: 5
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DEVELOPMENT OF THE CORE-BOWING REACTIVITYANALYSIS CODE SYSTEM ATLAS AND ITS APPLICATION TOA LARGE FBR CORE NUCLEAR ENGINEERING AND DESIGN 1995, Vol 157, Iss 1-2,pp 15-26 Source item page count: 12
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ELECTRONIC-STRUCTURE OF PSEUDOBINARYSEMICONDUCTOR ALLOYS INXGA1-X AND INASXSB1-X INFRARED PHYSICS & TECHNOLOGY 1995, Vol 36, Iss 4, pp755-761 Source item page count: 7
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GROWTH AND SOME PROPERTIES OF IN-XGA-1-XNTHIN-FILMS BY REACTIVE EVAPORATION THIN SOLID FILMS 1995, Vol 261, Iss 1-2, pp 87-89 Source item page count: 3
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HOW COMPLIANT SHOULD A DIE-ATTACHMENT BE TOPROTECT THE CHIP FROM SUBSTRATE BOWING JOURNAL OF ELECTRONIC PACKAGING 1995, Vol 117, Iss 1, pp88-92 Source item page count: 5
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BOWING PARAMETERS FOR ZINCBLENDE AL1-XGAXN ANDGA1-XINXN APPLIED PHYSICS LETTERS 1995, Vol 66, Iss 22, pp 3051-3053 Source item page count: 3
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GUPTA P; MAITI B; MAITY AB; CHAUDHURI S; PAL AK THIN SOLID FILMS 1995, Vol 260, Iss 1, pp 75-85 Source item page count: 11
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COMPARATIVE RESULTS OF BONE-GRAFTING AND PINNINGIN OSTEOCHONDROSIS DISSECANS OF THE KNEE AKTUELLE RHEUMATOLOGIE 1995, Vol 20, Iss 2, pp 55-60 Source item page count: 6
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BANDGAP BOWING AND SPONTANEOUS ORDERING INZNSEXTE1-X SOLID STATE COMMUNICATIONS 1995, Vol 94, Iss 2, pp103-106 Source item page count: 4
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THEORETICAL-STUDY OF LIQUID DROPLET DISPERSION INA VENTURI SCRUBBER JOURNAL OF THE AIR & WASTE MANAGEMENTASSOCIATION 1995, Vol 45, Iss 3, pp 181-185 Source item page count: 5
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LANKES S; STANZL H; WOLF K; GIEGLER M; GEBHARDT W EXCITON LINE BROADENING IN ZNSEXTE1-X/GAAS JOURNAL OF PHYSICS-CONDENSED MATTER 1995, Vol 7, Iss7, pp 1287-1292 Source item page count: 6
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PREPARATION OF SEMICONDUCTING THIN-FILMS OFCUIN[SE1-Z TEZ]2 BY ELECTROPLATING ANALES DE QUIMICA 1994, Vol 90, Iss 2, pp 181-186 Source item page count: 6
29-char source abbrev: AN QUIM
Record 203 of 248
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DRISSKHODJA F; ABID H; KHELIFA B; AMRANE N; SOUDINIB; DRIZ M; BADI N; AOURAG H ELECTRONIC-STRUCTURE OF THE PSEUDOBINARYSEMICONDUCTOR ALLOY GAXAL1-XSB MATERIALS SCIENCE AND ENGINEERING B-SOLID STATEMATERIALS FOR ADVANCED TECHNOLOGY 1994, Vol 27, Iss2-3, pp 93-97 Source item page count: 5
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29-char source abbrev: MATER SCI ENG B-SOLID STATE M
Record 204 of 248
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MEASUREMENTS OF SOME PARAMETERS OF BOWING JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA 1994,Vol 96, Iss 4, pp 1985-1998 Source item page count: 14
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Record 205 of 248
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WICKENDEN DK; BARGERON CB; BRYDEN WA;MIRAGLIOTTA J; KISTENMACHER TJ HIGH-QUALITY SELF-NUCLEATED ALXGA1-X N LAYERS ON(00.1) SAPPHIRE BY LOW-PRESSURE METALORGANICCHEMICAL-VAPOR-DEPOSITION APPLIED PHYSICS LETTERS 1994, Vol 65, Iss 16, pp 2024-2026 Source item page count: 3
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KARACHEVTSEVA MV; IGNATEV AS; MOKEROV VG;NEMTSEV GZ; STRAKHOV VA; YAREMENKO NG TEMPERATURE-DEPENDENCE OF THEPHOTOLUMINESCENCE OF INXGA1-XAS/GAASQUANTUM-WELL STRUCTURES SEMICONDUCTORS 1994, Vol 28, Iss 7, pp 691-694 Source item page count: 4
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29-char source abbrev: SEMICONDUCTORS-ENGL TR
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GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GANXAS1-XUSING A N RADICAL AS THE N-SOURCE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS1994, Vol 33, Iss 8A, pp L1056-L1058 Source item page count: 3
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29-char source abbrev: JPN J APPL PHYS PT 2
Record 208 of 248
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DRIZ M; AOURAG H; ABID H; KHELIFA B; BADI N THE PSEUDOBINARY ALLOY (GA, AL)AS UNDERHYDROSTATIC-PRESSURE MATERIALS SCIENCE AND ENGINEERING B-SOLID STATEMATERIALS FOR ADVANCED TECHNOLOGY 1994, Vol 25, Iss2-3, pp 159-165 Source item page count: 7
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SOLID STATE COMMUNICATIONS 1994, Vol 91, Iss 5, pp407-411 Source item page count: 5
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29-char source abbrev: SOLID STATE COMMUN
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A MULTI-PARAMETRIC DOMAIN MODEL FOR HIGHLYGRAIN-ORIENTED POLYCRYSTALLINE SI-FE JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS1994, Vol 133, Iss 1-3, pp 49-52 Source item page count: 4
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29-char source abbrev: J MAGN MAGN MATER
Record 211 of 248
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VIJAYALAKSHMI RP; VENUGOPAL R; REDDY DR; REDDY BK STRUCTURAL AND BANDGAP STUDIES OF ZNSXCDSE1-XTHIN-FILMS SEMICONDUCTOR SCIENCE AND TECHNOLOGY 1994, Vol 9,Iss 5, pp 1062-1068 Source item page count: 7
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29-char source abbrev: SEMICOND SCI TECHNOL
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PREPARATION AND CHARACTERIZATIONS OFCUINXGA1-XSE2 THIN-FILMS CRYSTALLIZED BYANNEALING JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULARPAPERS SHORT NOTES & REVIEW PAPERS 1993, Vol 32, pp62-64 Source item page count: 3
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29-char source abbrev: JPN J APPL PHYS PT 1
Record 213 of 248
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WALL BOWING AND RELATED SKIN-EFFECT INFERROMAGNETIC AMORPHOUS RIBBONS IEEE TRANSACTIONS ON MAGNETICS 1993, Vol 29, Iss 6, pp3493-3495 Source item page count: 3
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VEDYAYEV A; COWACHE C; RYZHANOVA N; DIENY B QUANTUM EFFECTS IN THE GIANT MAGNETORESISTANCEOF MAGNETIC MULTILAYERED STRUCTURES JOURNAL OF PHYSICS-CONDENSED MATTER 1993, Vol 5, Iss44, pp 8289-8304 Source item page count: 16
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29-char source abbrev: J PHYS-CONDENS MATTER
Record 215 of 248
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MODELING OF SPATIAL DISTORTIONS IN A HIGH-SPEEDIMAGE CONVERTER CAMERA REVIEW OF SCIENTIFIC INSTRUMENTS 1993, Vol 64, Iss 10, pp2901-2904 Source item page count: 4
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29-char source abbrev: REV SCI INSTR
Record 216 of 248
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DEPENDENCE OF CONDUCTION-BAND EFFECTIVE-MASS ONQUATERNARY ALLOY COMPOSITION OF(IN0.52AL0.48AS)Z(IN0.53GA0.47AS)1-Z LATTICE-MATCHEDTO INP APPLIED PHYSICS LETTERS 1993, Vol 63, Iss 13, pp 1804-1806 Source item page count: 3
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29-char source abbrev: APPL PHYS LETT
Record 217 of 248
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LI SH; HINCKLEY JM; SINGH J; BHATTACHARYA PK CARRIER VELOCITY-FIELD CHARACTERISTICS AND ALLOYSCATTERING POTENTIAL IN SI1-XGEX/SI APPLIED PHYSICS LETTERS 1993, Vol 63, Iss 10, pp 1393-1395 Source item page count: 3
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29-char source abbrev: APPL PHYS LETT
Record 218 of 248
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PHOTOREFLECTANCE MEASUREMENTS OF THE E(1) ANDE(1)+DELTA(1) OPTICAL-TRANSITIONS IN IN1-XALXSBEPILAYERS SOLID STATE COMMUNICATIONS 1993, Vol 87, Iss 1, pp 9-11 Source item page count: 3
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OPTICAL-PROPERTIES IN RF-SPUTTERED CUINXGA1-XSE2THIN-FILMS APPLIED SURFACE SCIENCE 1993, Vol 70-1, pp 669-674 Source item page count: 6
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29-char source abbrev: APPL SURF SCI
Record 220 of 248
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RELATION BETWEEN PHOTOLUMINESCENCE WAVELENGTHAND LATTICE MISMATCH IN METALORGANICVAPOR-PHASE EPITAXY INGAAS/INP JOURNAL OF APPLIED PHYSICS 1993, Vol 73, Iss 9, pp4599-4604 Source item page count: 6
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29-char source abbrev: J APPL PHYS
Record 221 of 248
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OPTIMIZATION OF COMPOSITE, STIFFENED, IMPERFECTPANELS UNDER COMBINED LOADS FOR SERVICE IN THEPOSTBUCKLING REGIME COMPUTER METHODS IN APPLIED MECHANICS ANDENGINEERING 1993, Vol 103, Iss 1-2, pp 43-114 Source item page count: 72
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29-char source abbrev: COMPUT METHOD APPL MECH ENG
Record 222 of 248
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ALLOY EFFECTS ON THE BAND OFFSETS OFZNSXSE1-X-ZNSE HETEROSTRUCTURES PHYSICAL REVIEW B 1993, Vol 47, Iss 4, pp 2184-2190 Source item page count: 7
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29-char source abbrev: PHYS REV B
Record 223 of 248
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LEE H; KLEIN MV; ASPNES DE; KUO CP; PEANASKY M;CRAFORD MG OPTICAL STUDY OF (ALXGA1-X)0.5IN0.5P/GAASSEMICONDUCTOR ALLOYS BY SPECTROSCOPICELLIPSOMETRY JOURNAL OF APPLIED PHYSICS 1993, Vol 73, Iss 1, pp 400-406 Source item page count: 7
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29-char source abbrev: J APPL PHYS
Record 224 of 248
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STRUCTURAL-PROPERTIES OF CUINXGA1-XSE2 THIN-FILMSPREPARED BY RF-SPUTTERING JOURNAL OF APPLIED PHYSICS 1992, Vol 72, Iss 12, pp5657-5662 Source item page count: 6
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29-char source abbrev: J APPL PHYS
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CURRENT STATUS OF GAN AND RELATED-COMPOUNDS ASWIDE-GAP SEMICONDUCTORS JOURNAL OF CRYSTAL GROWTH 1992, Vol 124, Iss 1-4, pp433-438 Source item page count: 6
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29-char source abbrev: J CRYST GROWTH
Record 226 of 248
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HIGH-TEMPERATURE CREEP-BEHAVIOR OF AN NI-CR-W-BALLOY JOURNAL OF MATERIALS SCIENCE 1992, Vol 27, Iss 23, pp6481-6489 Source item page count: 9
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29-char source abbrev: J MATER SCI
Record 227 of 248
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COMPOSITIONAL TRENDS OF THE GLASS-TRANSITIONTEMPERATURE, URBACH-TAIL SLOPE AND OPTICAL GAP INAS0.5SE0.5-XTEX GLASSES MATERIALS LETTERS 1992, Vol 15, Iss 3, pp 202-206 Source item page count: 5
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29-char source abbrev: MATER LETT
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CATALYSIS BY ACETYLCHOLINESTERASE IN2-HYDRONIC-REACTIVE STATES - INTEGRITY OFDEUTERIUM-OXIDE EFFECTS AND HYDRON INVENTORIES BIOCHEMICAL JOURNAL 1992, Vol 285, pp 451-460 Source item page count: 10
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ELECTRONIC DENSITY OF STATES OF SEMICONDUCTORALLOYS FROM LATTICE-MISMATCHED ISOVALENT BINARYCONSTITUENTS PHYSICAL REVIEW B 1992, Vol 46, Iss 4, pp 2109-2118 Source item page count: 10
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29-char source abbrev: PHYS REV B
Record 230 of 248
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DETERMINATION OF THE BOWING PARAMETER OF THESPLIT-OFF BAND IN CD0.8ZN0.2TE(100) BYANGLE-RESOLVED PHOTOEMISSION SPECTROSCOPY PHYSICAL REVIEW B 1992, Vol 46, Iss 3, pp 1498-1504 Source item page count: 7
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29-char source abbrev: PHYS REV B
Record 231 of 248
Author(s):
SMITH SN; PHILLIPS CC; THOMAS RH; STRADLING RA;FERGUSON IT; NORMAN AG; MURDIN BN; PIDGEON CR SEMICONDUCTOR SCIENCE AND TECHNOLOGY 1992, Vol 7,Iss 7, pp 900-906 Source item page count: 7
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29-char source abbrev: SEMICOND SCI TECHNOL
Record 232 of 248
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TINOCO T; QUINTERO M; CHARLEBOIS A; RINCON C OPTICAL-PROPERTIES AND BAND-STRUCTURE OF THECUIN0.6GA0.4SE2 ALLOY MATERIALS LETTERS 1992, Vol 14, Iss 1, pp 17-20 Source item page count: 4
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29-char source abbrev: MATER LETT
Record 233 of 248
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OPTICAL-TRANSITIONS IN RF-SPUTTERED CUINXGA1-XSE2THIN-FILMS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS1992, Vol 31, Iss 6A, pp L703-L705 Source item page count: 3
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29-char source abbrev: JPN J APPL PHYS PT 2
Record 234 of 248
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GEORGAKILAS A; PANAYOTATOS P; STOEMENOS J;MOURRAIN JL; CHRISTOU A ACHIEVEMENTS AND LIMITATIONS IN OPTIMIZED GAASFILMS GROWN ON SI BY MOLECULAR-BEAM EPITAXY JOURNAL OF APPLIED PHYSICS 1992, Vol 71, Iss 6, pp2679-2701 Source item page count: 23
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29-char source abbrev: J APPL PHYS
Record 235 of 248
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RAJU KN; VIJAYALAKSHMI RP; REDDY DR; REDDY BK STRUCTURAL AND ENERGY-GAP VARIATIONS IN(ZNTE)X(CDSE)1-X THIN-FILMS JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 1992, Vol53, Iss 3, pp 341-344 Source item page count: 4
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29-char source abbrev: J PHYS CHEM SOLIDS
Record 236 of 248
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STRUCTURE OF THE ALLOY (GAAS)1-XGE2X AND ITSELECTRONIC-PROPERTIES PHYSICAL REVIEW B 1992, Vol 45, Iss 8, pp 4071-4076 Source item page count: 6
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29-char source abbrev: PHYS REV B
Record 237 of 248
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NUCLEATION OF A 60-DEGREES GLIDE DISLOCATION IN2-DIMENSIONAL OR 3-DIMENSIONAL GROWTH OFEPILAYERS JOURNAL OF ELECTRONIC MATERIALS 1991, Vol 20, Iss 10, pp767-774 Source item page count: 8
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29-char source abbrev: J ELECTRON MATER
Record 238 of 248
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MODELING STEEL FRAME BEHAVIOR UNDER FIRECONDITIONS ENGINEERING STRUCTURES 1991, Vol 13, Iss 4, pp 371-382 Source item page count: 12
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29-char source abbrev: ENG STRUCT
Record 239 of 248
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EFFECTS OF ORDERING ON THE BAND-STRUCTURE OF III-VSEMICONDUCTORS JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 1991, Vol52, Iss 9, pp 1109-1128 Source item page count: 20
29-char source abbrev: J PHYS CHEM SOLIDS
Record 240 of 248
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2-DIMENSIONAL IMPLICATIONS OF A PURELY REACTIVEMODEL FOR PLASMA-ETCHING IEEE TRANSACTIONS ON ELECTRON DEVICES 1991, Vol 38,Iss 9, pp 2025-2032 Source item page count: 8
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29-char source abbrev: IEEE TRANS ELECTRON DEVICES
Record 241 of 248
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VARIATION OF THE ENERGY-GAP WITH COMPOSITION INAIBIIIC2VI CHALCOPYRITE-STRUCTURE ALLOYS PHYSICAL REVIEW B 1991, Vol 44, Iss 4, pp 1613-1615 Source item page count: 3
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29-char source abbrev: PHYS REV B
Record 242 of 248
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TINOCO T; RINCON C; QUINTERO M; PEREZ GS PHASE-DIAGRAM AND OPTICAL-ENERGY GAPS FORCUINYGA1-YSE2 ALLOYS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 1991, Vol124, Iss 2, pp 427-434 Source item page count: 8
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29-char source abbrev: PHYS STATUS SOLIDI A-APPL RES
Record 243 of 248
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REACTIVITY DUE TO DEFORMATION OF A THIN PLATE IN ACRITICAL REACTOR NUCLEAR SCIENCE AND ENGINEERING 1991, Vol 108, Iss 2, pp150-171 Source item page count: 22
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29-char source abbrev: NUCL SCI ENG
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T(Z) PHASE-DIAGRAM AND OPTICAL-ENERGY GAPS INCUGA(SEZTE1-Z)2 ALLOYS JOURNAL OF ELECTRONIC MATERIALS 1991, Vol 20, Iss 5, pp353-357 Source item page count: 5
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29-char source abbrev: J ELECTRON MATER
Record 245 of 248
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FUJITA S; HAYASHI S; FUNATO M; YOSHIE T; FUJITA S PROPERTIES OF ZN1-XCDXS TERNARY ANDZN1-XCDXS1-YSEY QUATERNARY THIN-FILMS ON GAASGROWN BY OMVPE JOURNAL OF CRYSTAL GROWTH 1991, Vol 107, Iss 1-4, pp674-678 Source item page count: 5
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29-char source abbrev: J CRYST GROWTH
Record 246 of 248
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STRUCTURAL CONSEQUENCES OF TRANSCORTICAL HOLESIN LONG BONES LOADED IN TORSION JOURNAL OF BIOMECHANICS 1990, Vol 23, Iss 12, pp 1261-1268 Source item page count: 8
29-char source abbrev: J BIOMECH
Record 247 of 248
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ELLIPSOMETRIC STUDY OF ALLNAS AND ALGAP ALLOYS JOURNAL OF APPLIED PHYSICS 1991, Vol 69, Iss 2, pp 965-970 Source item page count: 6
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29-char source abbrev: J APPL PHYS
Record 248 of 248
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BOWING EFFECT ON ELASTIC STABILITY OF FRAMESUNDER PRIMARY BENDING MOMENTS JOURNAL OF STRUCTURAL ENGINEERING-ASCE 1991, Vol117, Iss 1, pp 111-127 Source item page count: 17
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29-char source abbrev: J STRUCT ENG-ASCE
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Chemwatch australian msds 4929-88

AC100E PART B Chemwatch Material Safety Data Sheet Issue Date: 6-Dec-2007 CHEMWATCH 4929-88 NC317ECP Version No:2.0 CD 2008/1 Page 1 of 19 Section 1 - CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT NAME SYNONYMS "hardener adhesive system Part B cartridge" PROPER SHIPPING NAME PRODUCT USE Adhesive system applied by a cartridge. SUPPLIER Company: Powe

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INFORMATION TECHNOLOGY AND COMMUNICATIONS Mitigating Motion Sickness in Ground Vehicles J.T. Coyne,1 R. Stripling,1 E. Rovira,2 D. Hunter,3 J.V. Cohn,1 K. Brendley,3 G. Zwick,2 and G. Carter2 Introduction: Motion sickness (MS) represents a challenge to many warfighters, particularly those in command and control vehicles (C2V). Research by the U.S. Army and NASA1 suggests that as many as 9

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