Imrad.kiev.ua

BYC10-600
Hyperfast power diode
20 September 2012
Product data sheet
1. Product profile
1.1 General description
Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package 1.2 Features and benefits
• Reduces switching losses in associated MOSFET 1.3 Applications
• Continuous Current Mode (CCM) Power Factor Correction (PFC) • Half-bridge/full-bridge switched-mode power supplies 1.4 Quick reference data
Quick reference data
Parameter
Conditions
Static characteristics
VF
Dynamic characteristics
trr
NXP Semiconductors
BYC10-600
Hyperfast power diode
2. Pinning information
Pinning information
Symbol Description
Simplified outline
Graphic symbol
TO-220AC (SOD59)
3. Ordering information
Ordering information
Type number
Package
Name
Description
plastic single-ended package; heatsink mounted; 1 mounting 4. Limiting values
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Parameter
Conditions
repetitive peak forward current δ = 0.5 ; Tmb ≤ 78 °C; square-wave pulsetp = 8.3 ms; Tj(init) = 25 °C; sine-wave All information provided in this document is subject to legal disclaimers.
Product data sheet
20 September 2012
NXP Semiconductors
BYC10-600
Hyperfast power diode
Fig. 1. Forward power dissipation as a function of
Fig. 2. Forward power dissipation as a function of
average forward current; square waveform;
average forward current; sinusoidal waveform;
maximum values
maximum values
5. Thermal characteristics
Thermal characteristics
Parameter
Conditions
Fig. 3. Transient thermal impedance from junction to mounting base as a function of pulse width
All information provided in this document is subject to legal disclaimers.
Product data sheet
20 September 2012
NXP Semiconductors
BYC10-600
Hyperfast power diode
6. Characteristics
Characteristics
Parameter
Conditions
Static characteristics
VF
Dynamic characteristics
trr
Tj = 25 °C; IF = 10 A; VR = 400 V; dIF/dt = 500 A/s; Tj = 25 °C; IF = 10 A; VR = 400 V; dIF/dt = 500 A/s; peak reverse recovery IF = 10 A; VR = 400 V; dIF/dt = 100 A/s; TjIF = 10 A; VR = 400 V; dIF/dt = 500 A/s; IF = 10 A; dIF/dt = 100 A/s; Tj = 25 °C; All information provided in this document is subject to legal disclaimers.
Product data sheet
20 September 2012
NXP Semiconductors
BYC10-600
Hyperfast power diode
Fig. 4. Forward current as a function of forward
Fig. 5. Reverse leakage current as a function of
reverse voltage; typical values
Fig. 6. Reverse recovery definitions; ramp recovery
Fig. 7. Forward recovery definitions
All information provided in this document is subject to legal disclaimers.
Product data sheet
20 September 2012
NXP Semiconductors
BYC10-600
Hyperfast power diode
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC
max 4.7 1.40 0.95 1.7 0.65 15.8 6.8 10.30 1. Protruded dambar are included in the dimension.
Fig. 8. Package outline TO-220AC (SOD59)
All information provided in this document is subject to legal disclaimers.
Product data sheet
20 September 2012
NXP Semiconductors
BYC10-600
Hyperfast power diode
In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - 8. Legal information
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Definition
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product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
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Limiting values — Stress above one or more limiting values (as defined in
data sheet shall define the specification of the product as agreed between the Absolute Maximum Ratings System of IEC 60134) will cause permanent NXP Semiconductors and its customer, unless NXP Semiconductors and damage to the device. Limiting values are stress ratings only and (proper) customer have explicitly agreed otherwise in writing. In no event however, operation of the device at these or any other conditions above those shall an agreement be valid in which the NXP Semiconductors product given in the Recommended operating conditions section (if present) or the is deemed to offer functions and qualities beyond those described in the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
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Product data sheet
20 September 2012
NXP Semiconductors
BYC10-600
Hyperfast power diode
grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
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8.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
All information provided in this document is subject to legal disclaimers.
Product data sheet
20 September 2012
NXP Semiconductors
BYC10-600
Hyperfast power diode
9. Contents
1
NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 20 September 2012
All information provided in this document is subject to legal disclaimers.
Product data sheet
20 September 2012

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